NTD4815N, NVD4815N
TYPICAL PERFORMANCE CURVES
60
50
5.5 V to 10 V
5V
T J = 25 ° C
4.5 V
80
70
V DS ≥ 10 V
60
40
30
4V
3.8 V
50
40
20
3.6 V
30
T J = 125 ° C
10
0
0
1
2
3
4
3.4 V
3.2 V
3V
5
20
10
0
0
T J = 25 ° C
1 2
3
T J = ? 55 ° C
4 5
6
7
8
9
10
0.030
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.030
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.025
0.020
0.015
0.010
0.005
I D = 30 A
T J = 25 ° C
0.025
0.020
0.015
0.010
0.005
T J = 25 ° C
V GS = 4.5 V
V GS = 11.5 V
0
2
3
4
5
6
7
8
9
10
11
12
0
5
10
15
20
25
30
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.0
I D = 30 A
V GS = 10 V
100,000
10,000
V GS = 0 V
T J = 175 ° C
1.5
1000
1.0
100
T J = 125 ° C
0.5
? 50 ? 25
0
25
50
75
100
125
150
175
10
4
8
12
16
20
24
28
32
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
相关PDF资料
NTD4854NT4G MOSFET N-CH 25V 15.7A DPAK
NTD4855NT4G MOSFET N-CH 25V 14A DPAK
NTD4856NT4G MOSFET N-CH 25V 13.3A DPAK
NTD4857NT4G MOSFET N-CH 25V 12A DPAK
NTD4860NT4G MOSFET N-CH 25V 10.4A DPAK
NTD4863NA-35G MOSFET N-CH 25V 49A SGL IPAK
NTD4865NT4G MOSFET N-CH 25V 8.5A DPAK
NTD4904N-1G MOSFET N-CH 30V 79A SGL IPAK
相关代理商/技术参数
NTD4854N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK
NTD4854N-1G 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854N-35G 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854NT4G 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4854NT4H 制造商:ON Semiconductor 功能描述:
NTD4855N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK
NTD4855N-1G 功能描述:MOSFET NFET 25V 98A 0.0033R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4855N-35G 功能描述:MOSFET NFET 25V 98A 0.0033R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube